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2N3392 Specification,DataSheet,PDF...
Specifications: RF Bipolar Transistor Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):150; C-E Breakdown Voltage:25V; Collector Current:0.5A; DC Current Gain Max (hfe):300; Leaded Process Compatible:Yes; Mou 58K9629;
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Rohs: Yes
Min/Max :
Pack :
Manufacturer : FAIRCHILD SEMICONDUCTOR
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Data Sheet    :

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MOUSER
(800) 346-6873
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FARNELL
08701 200 200
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NEWARK
1 (773) 784-5100
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AVNET
1-800-332-8638
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